Media type: E-Book; Thesis Title: MOVPE growth and characterization of AlGxGa-1tnxN/GaN heterostructures for HEMT application Contributor: Kaluza, Nicoleta Elena [Verfasser] Extent: Online-Ressource Language: English Identifier: Keywords: Verbindungshalbleiter > Borgruppennitride > Heterostruktur > MOCVD-Verfahren > Saphir > Substrat Origination: University thesis: Aachen, Techn. Hochsch., Diss., 2003 Footnote: Access State: Open Access