Media type: E-Article Title: Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide Contributor: Garg, Shelly; Saurabh, Sneh imprint: Institute of Electrical and Electronics Engineers (IEEE), 2019 Published in: IEEE Journal of the Electron Devices Society Language: Not determined DOI: 10.1109/jeds.2019.2907314 ISSN: 2168-6734 Keywords: Electrical and Electronic Engineering ; Electronic, Optical and Magnetic Materials ; Biotechnology Origination: Footnote: Access State: Open Access