> Detailanzeige
Abass, A. K
[MitwirkendeR];
Abdullin, Kh. A
[MitwirkendeR];
Adhikari, M
[MitwirkendeR];
Albers, H
[MitwirkendeR];
Aldzhanov, M. A
[MitwirkendeR];
Aleksandrov, L. N
[MitwirkendeR];
Aleksandrova, M. M
[MitwirkendeR];
Ali, A. R
[MitwirkendeR];
Amelinckx, S
[MitwirkendeR];
Andreeva, O. B
[MitwirkendeR];
Appel, F
[MitwirkendeR];
Arbuzov, V. I
[MitwirkendeR];
Bachert, H.-J
[MitwirkendeR];
Badarinath, K. V. S
[MitwirkendeR];
Bagraev, N. T
[MitwirkendeR];
Bahadur, H
[MitwirkendeR];
Bakker, H
[MitwirkendeR];
Balchaitis, G
[MitwirkendeR];
Baranskii, P. I
[MitwirkendeR];
Barrière, A. S
[MitwirkendeR];
Beister, G
[MitwirkendeR];
Beji, H
[MitwirkendeR];
Berezhkova, G. V
[MitwirkendeR];
Berger, H
[MitwirkendeR];
[...]
Physica status solidi
: Volume 91, Number 1: September 16
- [Reprint 2021]
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- Medientyp: E-Book
- Titel: Physica status solidi : Volume 91, Number 1: September 16
- Beteiligte: Görlich [HerausgeberIn]; Abass, A. K [MitwirkendeR]; Abdullin, Kh. A [MitwirkendeR]; Adhikari, M [MitwirkendeR]; Albers, H [MitwirkendeR]; Aldzhanov, M. A [MitwirkendeR]; Aleksandrov, L. N [MitwirkendeR]; Aleksandrova, M. M [MitwirkendeR]; Ali, A. R [MitwirkendeR]; Amelinckx, S [MitwirkendeR]; Andreeva, O. B [MitwirkendeR]; Appel, F [MitwirkendeR]; Arbuzov, V. I [MitwirkendeR]; Bachert, H.-J [MitwirkendeR]; Badarinath, K. V. S [MitwirkendeR]; Bagraev, N. T [MitwirkendeR]; Bahadur, H [MitwirkendeR]; Bakker, H [MitwirkendeR]; Balchaitis, G [MitwirkendeR]; Baranskii, P. I [MitwirkendeR]; Barrière, A. S [MitwirkendeR]; Beister, G [MitwirkendeR]; Beji, H [MitwirkendeR]; Berezhkova, G. V [MitwirkendeR]; Berger, H [MitwirkendeR]; Bhattacharya, R. S [MitwirkendeR]; Blank, V. D [MitwirkendeR]; Bohringer, K [MitwirkendeR]; Bolzoni, F [MitwirkendeR]; Borshch, A. A [MitwirkendeR]; Bostanjoglo, O [MitwirkendeR]; Brodin, M. S [MitwirkendeR]; Bryzgalova, N. I [MitwirkendeR]; Bärner, K [MitwirkendeR]; Choudhury, K [MitwirkendeR]; Corbett, J. W [MitwirkendeR]; Corelli, J. C [MitwirkendeR]; Couturier, G [MitwirkendeR]; Das, D [MitwirkendeR]; Dasgupta, B. B [MitwirkendeR]; Datt, S. C [MitwirkendeR]; Dekhtyaruk, N. T [MitwirkendeR]; Delaey, L [MitwirkendeR]; Di Giulio, M [MitwirkendeR]; Elerts, M. A [MitwirkendeR]; Endruschat, E [MitwirkendeR]; Ermakov, A. E [MitwirkendeR]; Flietner, H [MitwirkendeR]; Frantsuzov, A. A [MitwirkendeR]; Fromageau, R [MitwirkendeR]; Gerard, N [MitwirkendeR]; Gevers, G [MitwirkendeR]; Golovanova, N. S [MitwirkendeR]; Goltzene, A [MitwirkendeR]; Govor, G. A [MitwirkendeR]; Grabovskis, V. J [MitwirkendeR]; Gundyrev, V. M [MitwirkendeR]; Happ, M [MitwirkendeR]; Hemschik, H [MitwirkendeR]; Huang, Huei Li [MitwirkendeR]; Ivanov, A. V [MitwirkendeR]; Jassim, H. A [MitwirkendeR]; Jog, K. N [MitwirkendeR]; Juška, G [MitwirkendeR]; Kadyrov, B. Kh [MitwirkendeR]; Kalbitzer, S [MitwirkendeR]; Kameneckas, J [MitwirkendeR]; Kapinos, V. G [MitwirkendeR]; Kardashev, B. K [MitwirkendeR]; Keller, J. M [MitwirkendeR]; Khodyaeva, M. A [MitwirkendeR]; Kikkawa, S [MitwirkendeR]; Kitao, M [MitwirkendeR]; Kleint, C [MitwirkendeR]; Koizumi, M [MitwirkendeR]; Korneva, N. N [MitwirkendeR]; Kornyushkin, N. A [MitwirkendeR]; Kreislerová, Y [MitwirkendeR]; Krispin, P [MitwirkendeR]; Kryszewski, M [MitwirkendeR]; Kuhrt, Ch [MitwirkendeR]; Kustov, S. B [MitwirkendeR]; Landuyt, J. van [MitwirkendeR]; Larchev, V. I [MitwirkendeR]; Lebedev, A. A [MitwirkendeR]; Lebedev, A. B [MitwirkendeR]; Lebedev, A. I [MitwirkendeR]; Leccabue, F [MitwirkendeR]; Lee, T. C [MitwirkendeR]; Lemke, H [MitwirkendeR]; Ligenza, S [MitwirkendeR]; Lin, Ming Yen [MitwirkendeR]; Liu, X. H [MitwirkendeR]; Lovey, F. C [MitwirkendeR]; Lubbes, A [MitwirkendeR]; Lukyanchikova, N. B [MitwirkendeR]; Maege, J [MitwirkendeR]; Magnouche, A [MitwirkendeR]; Majeid, K. J [MitwirkendeR]; Majumdar, C. K [MitwirkendeR]; Melker, A. I [MitwirkendeR]; Messerschmidt, U [MitwirkendeR]; Meyer, B [MitwirkendeR]; Micocci, G [MitwirkendeR]; Misho, R. H [MitwirkendeR]; Morita, N [MitwirkendeR]; Mostafa, F. M [MitwirkendeR]; Möllmann, K.-P [MitwirkendeR]; Nakano, K [MitwirkendeR]; Nikolaev, J. P [MitwirkendeR]; Panizzieri, R [MitwirkendeR]; Pareti, L [MitwirkendeR]; Parshad, R [MitwirkendeR]; Perstnev, P. P [MitwirkendeR]; Petrauskas, G [MitwirkendeR]; Pflueger, R [MitwirkendeR]; Platonov, P. A [MitwirkendeR]; Popova, S. V [MitwirkendeR]; Ptasiewicz-Bak, H [MitwirkendeR]; Radelaar, S [MitwirkendeR]; Rai, A. K [MitwirkendeR]; Rao, K. R. P. M [MitwirkendeR]; Rashid, M. H [MitwirkendeR]; Razykov, T. M [MitwirkendeR]; Rijke, Q. J. A [MitwirkendeR]; Rogulis, U. T [MitwirkendeR]; Ruijvek, L. J. v [MitwirkendeR]; Sakalas, A [MitwirkendeR]; Sanyal, S. P [MitwirkendeR]; Sato, T [MitwirkendeR]; Savyak, V. V [MitwirkendeR]; Schenk, M [MitwirkendeR]; Schittny, Th [MitwirkendeR]; Schrader, S [MitwirkendeR]; Schwab, C [MitwirkendeR]; Semioshko, V. N [MitwirkendeR]; Serdyuk, V. V [MitwirkendeR]; Shabanova, I. N [MitwirkendeR]; Sharma, K. K [MitwirkendeR]; Shcherbina, L. A [MitwirkendeR]; Shekhar, S [MitwirkendeR]; Shimada, M [MitwirkendeR]; Siciliano, P [MitwirkendeR]; Simonenko, Yu.V [MitwirkendeR]; Singh, R. K [MitwirkendeR]; Skrotskaya, G. G [MitwirkendeR]; Spit, F. H. M [MitwirkendeR]; Srivastava, G. P [MitwirkendeR]; Stoeff, St [MitwirkendeR]; Streltsov, V. A [MitwirkendeR]; Subramanian, K. N [MitwirkendeR]; Surin, B. P [MitwirkendeR]; Suzuki, K [MitwirkendeR]; Syassen, K [MitwirkendeR]; Sánchez, J. L [MitwirkendeR]; Takeuchi, S [MitwirkendeR]; Tananaeva, O. I [MitwirkendeR]; Tendeloo, G. van [MitwirkendeR]; Tepore, A [MitwirkendeR]; Tognato, R [MitwirkendeR]; Tolstoi, M. N [MitwirkendeR]; Uimin, M. A [MitwirkendeR]; Vaidya, S. N [MitwirkendeR]; Vaksman, Yu. F [MitwirkendeR]; Veliev, R. K [MitwirkendeR]; Vitol, I. K [MitwirkendeR]; Vlasenko, L. S [MitwirkendeR]; Westerveld, J. P. A [MitwirkendeR]; Yamada, S [MitwirkendeR]; Yamamoto, T [MitwirkendeR]; Yoshii, K [MitwirkendeR]; Zaumseil, P [MitwirkendeR]; Zemčík, T [MitwirkendeR]; Zlomanov, V. P [MitwirkendeR]; Zotov, M. I [MitwirkendeR]; Čermák, K [MitwirkendeR]
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Erschienen:
Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe] - Erschienen in: Physica status solidi ; Volume 91, Number 1 ; A
- Ausgabe: Reprint 2021
- Umfang: 1 Online-Ressource (416 p)
- Sprache: Englisch
- DOI: 10.1515/9783112492987
- ISBN: 9783112492987
- Identifikator:
- Schlagwörter: SCIENCE / General
- Art der Reproduktion: [Online-Ausgabe]
- Entstehung:
-
Anmerkungen:
In English
Mode of access: Internet via World Wide Web
- Beschreibung: Frontmatter -- Contents -- Original Papers -- Pressure-Induced Structural Transition in SrS -- Kinetics of Laser-Induced Crystallization of Amorphous Germanium Films -- Mössbauer Studies of Corrosion and Inhibition -- Lattice properties -- Theory of Melting. III. Nature of the Molten Glasses -- Third-Order Elastic Constants for Divalent Metal Oxides from Model Potentials -- Defects, atomistic aspects -- On the Behaviour oi Interaction of Copper Atoms with Lattice Defects in Quenched and Cold-Worked Ni-Cu Alloys -- Dynamic Characteristics of Radiation Defects in Silicon -- Deformation Studies on Cu-Ni-Sn Spinodal Alloys -- Dislocations in SmS Single Crystals -- Acoustic and Electron Microscopy Study of the Dislocation Structure in MgO Crystals -- Defects in Crystals under Pressure -- Magnetism -- Neutron Diffraction Study of the Spinel CoAlFeO4 -- Magnetic B-T Phase Diagram of Anion Substituted MnAs. Magnetocaloric Experiments -- Mössbauer, Electrical, and Magnetic Studies of the Sn-Doped Ni3Fe Alloy -- Remanent Magnetization in Randomly Distributed Cubic Particles -- Extended electronic states and transitions -- Optical Parameters of Chemically Deposited Tin Disulphide -- The Anisotropy of Refraction Nonlinearity and Vector Self-Diffraction in the Wide-Gap Semiconductors of CdS Type -- Localized electronic states and transitions -- Dotierungseigenschaften von Rhodium und Iridium in Silizium -- U-Shaped Distributions at Semiconductor Interfaces and the Nature of the Related Defect Centres -- Gold Solid Solution Decay in Silicon. II. Optical Nuclear Polarization Data -- Studies of Long-Wave Luminescence of Zinc Selenide Monocrystals -- On the Analysis of Complex Thermally Stimulated Capacitance Curves -- On the Purple and Violet Light Emissions in Thermoluminescing Quartz -- Degeneracy of Activator Energy Levels with Glassy Matrix Intrinsic States -- Electric transport -- Thermally Stimulated Depolarization Currents in Polypropylene Foils -- Relaxation of Tunnel Injection Limited Current in Case of Low Capture Probability -- Drift Mobility oi Holes in TlSbS2 -- Impurity Photoconductivity and Electrical Properties of Pb 1-x-y GexSnyTe Doped with Indium -- Anomalous Skin Effect in a Cylindrical Conductor -- Multiple Trapping Approach to the TSC Drift Experiment -- Hopping Conduction in NiF2 Thin Films as a Function of Their Crystallization Degree and Composition -- Thermoelectric Power of Glassy AS40Se 60-xTex -- Device-related phenomena -- Noise Investigation of the Impact Ionization in GaAs -- Ion Beam Mixing of Alternate Au-Ge Layer with GaAs -- Physical and Chemical Changes in the Surface Layer of GaAs Induced by Recoil Implantation of Al Atoms -- Errata -- On the Nature of Various Stacking Defects in 18R Martensite in Cu-Al Alloys. A Study by High Resolution Electron Microscopy -- Diffusion of Antimony (125Sb) in Polycrystalline Silicon -- Barrier Height and Its Instability in Al-Ultrathin SiO2 -n/p-Si Devices -- Short Notes -- On the Total Free Energy Differences, at Temperatures near the Melting Point, between Liquid Clusters and Liquid Flat Mono-Layers, Containing the Same Number of Atoms and Both Embedded in a F.C.C. Crystal Matrix -- Transition Temperature and Heat of Crystallization of Amorphous Bulk Gallium Antimonide Obtained by Rapid Quenching from the Melt at High Pressure -- Simulation of Recrystallization of the Depleted Zone at the Thermal Spike -- Chemical Bond Peculiarities of Elements in Amorphous Alloy Surface Layers on the Basis of Fe -- The Far Infrared Spectra of MgAl2-xFexO4 Spinel -- Low-Temperature Heat Capacity of ZnGa2S4, ZnGa2Se4, and ZnGa2Te4 Thiogallates -- Effect of High-Temperature Annealing on Phonon-Phonon Relaxation in Transmutationally-Doped Silicon Crystals -- On the Increased Sensitivity of X-Ray Rocking Curve Measurements by Triple-Crystal Diffractometry -- The Influence of Bi on Lattice Parameter and Carrier Concentration of PbTe -- Fracture Model for a Strained Anharmonic Chain Having Atoms with Two Degrees of Freedom -- EPR Monitoring of Annealing Effects in F-Implanted Amorphous Silicon -- Radiation-Enhanced Oxygen-Related Thermal Donor Formation in Neutron-Transmutation-Doped Floating-Zone Silicon -- ε`→ε Transformation in MnAl-C Alloys -- Magnetic Properties of MnAs Single Crystals -- Curie Temperatures of Some Substituted Nd2Fe14B Tetragonal Alloys -- The Effect of Dispersed PLZT Particles on the Electrical Conductivity of Lithium Iodide -- Impurity Photoconductivity of Indium Doped Lead Tin Telluride -- The Resistivity of Dissolved Hydrogen in Palladium and Amorphous Pd80Si20 -- Synthesis and Electrical Properties of LixMg1-xM2O4 (M = Ti, V) (0≤x≤1.0) -- Energy Band Models of n-ZnxCd1-x S—p-CdTe and n-ZnxCd1-x S — p-Si (0≤x≤1) Heterojunctions -- Emission from a Semi-Insulating Layer in AlGaAs-GaAs Double Heterostructures -- Pre-Printed Titles
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