Fischer, Axel
[VerfasserIn];
Pahner, Paul
[VerfasserIn];
Lüssem, Björn
[VerfasserIn];
Scholz, Reinhard
[VerfasserIn];
Koprucki, Thomas
[VerfasserIn];
Gärtner, Klaus
[VerfasserIn];
Glitzky, Annegret
[VerfasserIn]
Self-heating, bistability, and thermal switching in organic semiconductors
- [published Version]
Titel:
Self-heating, bistability, and thermal switching in organic semiconductors
Beteiligte:
Fischer, Axel
[VerfasserIn];
Pahner, Paul
[VerfasserIn];
Lüssem, Björn
[VerfasserIn];
Scholz, Reinhard
[VerfasserIn];
Koprucki, Thomas
[VerfasserIn];
Gärtner, Klaus
[VerfasserIn];
Glitzky, Annegret
[VerfasserIn]
Erschienen:
Berlin : Weierstraß-Institut für Angewandte Analysis und Stochastik, 2012
Erschienen in:Preprint / Weierstraß-Institut für Angewandte Analysis und Stochastik , Volume 1735, ISSN 0946-8633
Anmerkungen:
Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
Beschreibung:
We demonstrate electric bistability induced by the positive feedback of self-heating onto the thermally activated conductivity in a two-terminal device based on the organic semiconductor C60. The central undoped layer with a thickness of 200 nm is embedded between thinner n-doped layers adjacent to the contacts minimizing injection barriers. The observed current-voltage characteristics follow the general theory for thermistors described by an Arrhenius-like conductivity law. Our findings including hysteresis phenomena are of general relevance for the entire material class since most organic semiconductors can be described by a thermally activated conductivity.