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Jachalke, Sven [VerfasserIn]; Schenk, Tony [VerfasserIn]; Park, Min Hyuk [VerfasserIn]; Schroeder, Uwe [VerfasserIn]; Mikolajick, Thomas [VerfasserIn]; Stöcker, Hartmut [VerfasserIn]; Mehner, Erik [VerfasserIn]; Meyer, Dirk C. [VerfasserIn]

Pyroelectricity of silicon-doped hafnium oxide thin films

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  • Medientyp: E-Artikel
  • Titel: Pyroelectricity of silicon-doped hafnium oxide thin films
  • Beteiligte: Jachalke, Sven [VerfasserIn]; Schenk, Tony [VerfasserIn]; Park, Min Hyuk [VerfasserIn]; Schroeder, Uwe [VerfasserIn]; Mikolajick, Thomas [VerfasserIn]; Stöcker, Hartmut [VerfasserIn]; Mehner, Erik [VerfasserIn]; Meyer, Dirk C. [VerfasserIn]
  • Erschienen: Melville, NY : AIP Publishing, [2022]
  • Sprache: Englisch
  • DOI: 10.1063/1.5023390
  • Schlagwörter: Hafniumoxid-Dünnschichten ; Physik ; Ferroelectricity ; science-physics ; Pyroelektrizität ; Ferroelektrizität ; pyroelectric properties ; Pyroelectricity ; hafnium oxide thin films ; pyroelektrische Eigenschaften
  • Entstehung:
  • Anmerkungen: Hinweis: Link zum Artikel, der zuerst in der Zeitschrift 'Applied Physics Letters' bei AIP Publishing erschienen ist. DOI: 10.1063/1.5023390
  • Beschreibung: Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies of the related pyroelectric properties and their application potential are only rarely found. This work investigates the impact of Si doping on the phase composition and ferro- as well as pyroelectric properties of thin film capacitors. Dynamic hysteresis measurements and the field-free Sharp-Garn method were used to correlate the reported orthorhombic phase fractions with the remanent polarization and pyroelectric coefficient. Maximum values of 8.21 µC cm−2 and −46.2 µC K−1 m−2 for remanent polarization and pyroelectric coefficient were found for a Si content of 2.0 at%, respectively. Moreover, temperature-dependent measurements reveal nearly constant values for the pyroelectric coefficient and remanent polarization over the temperature range of 0 °C to 170 °C, which make the material a promising candidate for IR sensor and energy conversion applications beyond the commonly discussed use in memory applications.
  • Zugangsstatus: Freier Zugang
  • Rechte-/Nutzungshinweise: Urheberrechtsschutz