Beschreibung:
<jats:p>A neutron activation technique has been used to analyze the gallium content in SiO2 films deposited on n-type GaAs. Gallium was observed in the SiO2 films after annealing at temperatures between 730 and 940 °C. It is found that the surface of GaAs reacts with the H2O in the SiO2 films and/or ambient gas via pinholes at these high temperatures. The reaction is influenced by the partial pressure of water in the ambient gas.</jats:p>