Erschienen in:Journal of Physics D: Applied Physics
Sprache:
Nicht zu entscheiden
DOI:
10.1088/1361-6463/abe331
ISSN:
0022-3727;
1361-6463
Entstehung:
Anmerkungen:
Beschreibung:
<jats:title>Abstract</jats:title>
<jats:p>Because of the important role of two-dimensional (2D) magnetic semiconductors in low-dimensional spintronic devices, the generation of ferromagnetism within an ultrathin semiconducting sheet of a transition metal dichalcogenide is highly desirable. A pristine WS<jats:sub>2</jats:sub> sheet is a diamagnetic semiconducting transition metal dichalcogenide with superior electronic properties. In this study, we synthesised a free-standing WS<jats:sub>2</jats:sub> sheet by a chemical route followed by electrochemical exfoliation by a giant molecule. During exfoliation of the WS<jats:sub>2</jats:sub> crystal, atomic vacancies were created in the sheet with a lower number of layers. To understand the mechanism of exfoliation, we carried out x-ray diffraction, transmission electron microscopy, atomic force microscopy and Raman measurements. The types of atomic vacancies were realised by energy-dispersive x-ray spectroscopy, high-resolution transmission electron microscopy (fast Fourier transform), and x-ray photoelectron spectroscopy studies. We also observed a ferromagnetic ordering within the exfoliated WS<jats:sub>2</jats:sub> sheet, which is explained on the basis of the generation of an atomic vacancy induced spin-moment. The transport study of the exfoliated WS<jats:sub>2</jats:sub> sheet suggests that the electro-transport behaviour still remains as a semiconductor even after exfoliation. This ferromagnetic semiconducting system will be applicable in spintronic devices and this technique will enrich the literature, particularly for the preparation of a 2D semiconducting ferromagnet in a facile fashion.</jats:p>