> Detailanzeige

Ren, Yi; Scragg, Jonathan J. S.; Frisk, Christopher; Larsen, Jes K.; Li, Shu‐Yi; Platzer‐Björkman, Charlotte

Influence of the Cu2ZnSnS4 absorber thickness on thin film solar cells

Literatur-
verwaltung

Zur
Merkliste

Lösche von
Merkliste

Per Whatsapp teilen

Schließen

Merkliste



Sie können Bookmarks mittels Listen verwalten, loggen Sie sich dafür bitte in Ihr SLUB Benutzerkonto ein.
  • Medientyp: E-Artikel
  • Titel: Influence of the Cu2ZnSnS4 absorber thickness on thin film solar cells
  • Beteiligte: Ren, Yi; Scragg, Jonathan J. S.; Frisk, Christopher; Larsen, Jes K.; Li, Shu‐Yi; Platzer‐Björkman, Charlotte
  • Erschienen: Wiley, 2015
  • Erschienen in: physica status solidi (a)
  • Sprache: Englisch
  • DOI: 10.1002/pssa.201532311
  • ISSN: 1862-6300; 1862-6319
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: <jats:sec><jats:label /><jats:p>In this study, we investigate the influence of absorber thickness on Cu<jats:sub>2</jats:sub>ZnSnS<jats:sub>4</jats:sub> (CZTS) solar cells, ranging from 500 to 2000 nm, with nearly constant metallic composition. Despite the observed ZnS and SnS phases on the surface and backside of all absorber films, scanning electron microscopy, Raman scattering, and X‐ray diffraction show no large variations in material quality for the different thicknesses. The open‐circuit voltage (<jats:italic>V</jats:italic><jats:sub>oc</jats:sub>), short‐circuit current and overall power conversion efficiency of the fabricated devices show an initial improvement as the absorber thickness increases but saturate when the thickness exceeds 750 nm. External quantum efficiency (EQE) measurements suggest that the current is mainly limited by collection losses. This can result from non‐optimal bulk quality of the CZTS absorber (including the presence of secondary phases), which is apparently further reduced for the thinnest devices. The observed saturation of <jats:italic>V</jats:italic><jats:sub>oc</jats:sub> agrees with the expected influence from strong interface recombination. Finally, an effective collection depth of 750–1000 nm for the minority carriers generated in the absorber can be estimated from EQE, indicating that the proper absorber thickness for our device process is approximately 1000 nm. Performance could be improved for thicker films, if the collection depth can be increased.<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/pssa201532311-gra-0001.png" xlink:title="pssa201532311-gra-0001" /></jats:p></jats:sec>