• Medientyp: E-Artikel
  • Titel: Dynamic fine-grain leakage reduction using leakage-biased bitlines
  • Beteiligte: Heo, Seongmoo; Barr, Kenneth; Hampton, Mark; Asanović, Krste
  • Erschienen: Association for Computing Machinery (ACM), 2002
  • Erschienen in: ACM SIGARCH Computer Architecture News
  • Sprache: Englisch
  • DOI: 10.1145/545214.545231
  • ISSN: 0163-5964
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: <jats:p>Leakage power is dominated by critical paths, and hence dynamic deactivation of fast transistors can yield large savings. We introduce metrics for comparing fine-grain dynamic deactivation techniques that include the effects of deactivation energy and startup latencies, as well as long-term leakage current. We present a new circuit-level technique for leakage current reduction, leakage-biased bitlines, that has low deactivation energy and fast wakeup times. We show how this technique can be applied at a fine grain within an active microprocessor, and how microarchitectural scheduling policies can improve its performance. Using leakage-biased bitlines to deactivate SRAM read paths within I-cache memories saves over 24% of leakage energy and 22% of total I-cache energy when using a 70nm process. In the register file, fine-grained read port deactivation saves nearly 50% of leakage energy and 22% of total energy. Independently, turning off idle register file subbanks saves over 67% of leakage energy (57% total register file energy) with no loss in performance.</jats:p>