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Medientyp:
E-Artikel
Titel:
High-κ/Metal Gate Science and Technology
Beteiligte:
Guha, Supratik;
Narayanan, Vijay
Erschienen:
Annual Reviews, 2009
Erschienen in:Annual Review of Materials Research
Sprache:
Englisch
DOI:
10.1146/annurev-matsci-082908-145320
ISSN:
1531-7331;
1545-4118
Entstehung:
Anmerkungen:
Beschreibung:
<jats:p> High-κ/metal gate technology is on the verge of replacing conventional oxynitride dielectrics in state-of-the-art transistors for both high-performance and low-power applications. In this review we discuss some of the key materials issues that complicated the introduction of high-κ dielectrics, including reduced electron mobility, oxygen-based thermal instabilities, and the absence of thermally stable dual-metal electrodes. We show that through a combination of materials innovations and engineering ingenuity these issues were successfully overcome, thereby paving the way for high-κ/metal gate implementation. </jats:p>