Beschreibung:
<jats:p> Semiconductor device structures are often grown metamorphically on lattice-mismatched substrates using an intermediate buffer layer to accommodate the lattice mismatch and reduce the threading dislocation density. These structures have traditionally been designed empirically but this may not yield the optimum structure in terms of dislocation density reduction. Recently advancements in the understanding of dislocation dynamics have made it possible in principle to design the buffer layer and device structure so that all glissile threading dislocations in the buffer layer are diverted at the interface for the creation of misfit dislocations. In this paper we present a criterion for the complete removal of threading dislocations from the surface of a device structure on a buffer layer, and we discuss its practical application. </jats:p>