Beschreibung:
<jats:p> There have been a number of studies of dislocation filtering by strained-layer superlattices incorporated into semiconductor heterostructures. Despite the extensive nature of this body of work, a general understanding of the phenomenon has proved elusive, preventing wide application of SLS dislocation filters in practical devices. However, recent advances in the understanding of dislocation dynamics and the consequent development of detailed plastic flow models allow the prediction of threading dislocation density profiles in general semiconductor heterostructures. In this work, we have applied such a plastic flow model to InGaAs/GaAs (001) heterostructures containing an InGaAs-based SLS, and we have studied the dependence of the surface and average threading dislocation densities on the placement and design of the SLS. </jats:p>