Beschreibung:
<jats:p> Metamorphic semiconductor devices often contain abrupt mismatched interfaces with relatively high densities of misfit dislocations. In such cases there has been some experimental evidence for pinning interactions, whereby a gliding threading dislocation associated with a misfit dislocation along a <110> type direction is impeded by interaction with a misfit dislocation along the orthogonal <110> type direction. This impediment to glide will tend to reduce the extent of strain relaxation, and this effect is expected to be significant in thin layers for which the impediment is sufficient to arrest the motion of the gliding dislocation altogether. In this paper we present a practical model for pinning interactions which can be used to extend the usefulness of plastic flow models down to the pseudomorphic limit, and we compare this model against experimental results for InGaAs/GaAs (001) heterostructures. </jats:p>