Beschreibung:
<jats:p> In this talk we will describe state-of-the-art approaches to the modeling of strain relaxation and dislocations in ZnS<jats:sub>y</jats:sub>Se<jats:sub>1-y</jats:sub>/GaAs (001) heterostructures, with applications to dislocation sidewall gettering (DSG) in devices. Current modeling approaches are based on the extension of the original Dodson and Tsao plastic flow model [B. W. Dodson and J. Y. Tsao, Appl. Phys. Lett., 51, 1325 (1987); Appl. Phys. Lett., 52, 852 (1988)] to include compositional grading and multilayers, dislocation interactions, and differential thermal expansion. Important recent breakthroughs have greatly enhanced the utility of these modeling approaches in three respects: i) pinning interactions have been included in graded and multilayered structures, providing a better description of the rate of strain relaxation as well as the limiting strain; ii) a refined model describing the interaction length for dislocation-dislocation interactions was formulated to include jogging in compositionally-graded and step-graded layers; and iii) inclusion of back-and-forth weaving of dislocations provides a more accurate description of heterostructures containing strain reversals, such as strained-layer superlattices or overshoot graded layers. We will describe these three key advances and use reasonable estimates of the kinetic parameters for ZnS<jats:sub>y</jats:sub>Se<jats:sub>1-y</jats:sub> to explain and illustrate practical features of dislocation sidewall gettering in II-VI heterostructures. </jats:p>