The Effect of Si Surface Flattening Process on the MISFET With High-k HfNx Multilayer Gate Dielectrics

Medientyp: E-Artikel
Titel: The Effect of Si Surface Flattening Process on the MISFET With High-k HfNx Multilayer Gate Dielectrics
Beteiligte: Ihara, Akio; Morita, Hiroki; Pyo, Jooyoung; Ohmi, Shun-Ichiro
Erschienen: Institute of Electrical and Electronics Engineers (IEEE), 2021
Erschienen in: IEEE Transactions on Semiconductor Manufacturing
Sprache: Nicht zu entscheiden
DOI: 10.1109/tsm.2021.3068475
ISSN: 0894-6507; 1558-2345
Schlagwörter: Electrical and Electronic Engineering ; Industrial and Manufacturing Engineering ; Condensed Matter Physics ; Electronic, Optical and Magnetic Materials
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