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Suzuki, Kazuaki; Hirayanagi, Noriyuki; Fujiwara, Tomoharu; Yamada, Atsushi; Ikeda, Junji; Yahiro, Takehisa; Kojima, Shinichi; Udagawa, Jin; Yamamoto, Hajime; Katakura, Norihiro; Suzuki, Motoko; Aoyama, Takashi; Takekoshi, Hidekazu; Umemoto, Takaaki; Shimizu, Hiroyasu; Fukui, Saori; Suzuki, Shohei; Okino, Teruaki; Ohkubo, Yukiharu; Shimoda, Toshimasa; Tanida, Toru; Watanabe, Yoichi; Kohama, Yoshiaki; Ohmori, Kaoru; [...]

Full-field exposure performance of electron projection lithography tool

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  • Medientyp: E-Artikel
  • Titel: Full-field exposure performance of electron projection lithography tool
  • Beteiligte: Suzuki, Kazuaki; Hirayanagi, Noriyuki; Fujiwara, Tomoharu; Yamada, Atsushi; Ikeda, Junji; Yahiro, Takehisa; Kojima, Shinichi; Udagawa, Jin; Yamamoto, Hajime; Katakura, Norihiro; Suzuki, Motoko; Aoyama, Takashi; Takekoshi, Hidekazu; Umemoto, Takaaki; Shimizu, Hiroyasu; Fukui, Saori; Suzuki, Shohei; Okino, Teruaki; Ohkubo, Yukiharu; Shimoda, Toshimasa; Tanida, Toru; Watanabe, Yoichi; Kohama, Yoshiaki; Ohmori, Kaoru; [...]
  • Erschienen: American Vacuum Society, 2004
  • Erschienen in: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
  • Sprache: Englisch
  • DOI: 10.1116/1.1808715
  • ISSN: 1071-1023; 1520-8567
  • Schlagwörter: Electrical and Electronic Engineering ; Condensed Matter Physics
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: <jats:p>Electron projection lithography (EPL) is a realistic technology for the 65nm node and below, as a complementary technology of optical lithography especially for contacts and gate layers because of its high resolution and large process margin. Nikon has developed an EPL exposure tool as an electron-beam (EB) stepper and the first generation EB stepper; NSR-EB1A is now almost completed as an R&amp;D tool for the 65nm technology node. Using a ϕ200mm reticle, a 20mm×25mm exposure field is realized. Full-field exposure performance of NSR-EB1A is shown. A 70nm isolated line and 1:1 nested lines are simultaneously resolved, as are 50nm 1:2 nested lines. 60nm contact holes are resolved with a depth of focus over a 10μm range and dosage window over ±6%. Stitching accuracy is about 20nm (3σ) and the single machine overlay is about 30nm (mean + 3σ). These data mean sufficient performance for device manufacturing of the 65nm technology node. The concept of a large subfield is one candidate for resolution and throughput enhancement in EPL production tool. The Coulomb blur is directly measured by an aerial image sensor for a large subfield and small beam half-angle, and the data show good agreement with simulations. It is shown that throughput over 20 wafers per hour (ϕ300mm) is realistic and achievable in a production tool of a 45nm technology node.</jats:p>