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Althowibi, Fahad A.; Ayers, John E.

Simulated x-ray diffraction from pseudomorphic GaAs/In0.3Ga0.7As superlattice high electron mobility transistor heterostructures on GaAs (001) substrates

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  • Medientyp: E-Artikel
  • Titel: Simulated x-ray diffraction from pseudomorphic GaAs/In0.3Ga0.7As superlattice high electron mobility transistor heterostructures on GaAs (001) substrates
  • Beteiligte: Althowibi, Fahad A.; Ayers, John E.
  • Erschienen: American Vacuum Society, 2017
  • Erschienen in: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
  • Sprache: Englisch
  • DOI: 10.1116/1.4981015
  • ISSN: 2166-2746; 2166-2754
  • Schlagwörter: Materials Chemistry ; Electrical and Electronic Engineering ; Surfaces, Coatings and Films ; Process Chemistry and Technology ; Instrumentation ; Electronic, Optical and Magnetic Materials
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  • Beschreibung: <jats:p>In this paper, the authors report a study of the simulated dynamical x-ray diffraction from GaAs/In0.3Ga0.7As superlattice high electron mobility transistor heterostructures on GaAs (001) substrates both with (metamorphic) and without (pseudomorphic) dislocations. The analysis of dynamical x-ray diffraction for 004, 115, 026, and 117 reflection profiles was conducted for the case of Cu kα1 radiation. The authors show that the threading dislocation density may be estimated from nondestructive x-ray rocking curve measurements, using the rocking curve peak intensity ratios or widths for superlattice diffraction peaks. Despite the complexity of these multilayered device structures and the resulting x-ray diffraction profiles, analysis of the 004 x-ray diffraction profile allows characterization of the pseudomorphic–metamorphic transition in them and is of considerable practical importance for device realization.</jats:p>