> Details
Abramcv, A. S
[Contributor];
Agrawal, C.S
[Contributor];
Agrawal, R.S
[Contributor];
Akkerman, A. F
[Contributor];
Alekseeva, L. I
[Contributor];
Almeida, A
[Contributor];
Amakusa, T
[Contributor];
Ambekiadis, K
[Contributor];
Amelinckx, S
[Contributor];
Anagnostopoulos, A. N
[Contributor];
Andreev, A. V
[Contributor];
Aronov, D. A
[Contributor];
Avesov, A.D
[Contributor];
Bagduev, E. G
[Contributor];
Balynas, V
[Contributor];
Bansal, C
[Contributor];
Baumvol, I. J . R
[Contributor];
Beige, H
[Contributor];
Blasse
[Contributor];
Bondarenko, L. A
[Contributor];
Boriskin, S. E
[Contributor];
Bosman, G
[Contributor];
Bostaütjoglo, O
[Contributor];
Brodovoi, A.V
[Contributor];
[...]
Physica status solidi
: Volume 73, 1: September 16
- [Reprint 2021]
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- Media type: E-Book
- Title: Physica status solidi : Volume 73, 1: September 16
- Contributor: Blasse [MitwirkendeR]; Görlich [HerausgeberIn]; Abramcv, A. S [MitwirkendeR]; Agrawal, C.S [MitwirkendeR]; Agrawal, R.S [MitwirkendeR]; Akkerman, A. F [MitwirkendeR]; Alekseeva, L. I [MitwirkendeR]; Almeida, A [MitwirkendeR]; Amakusa, T [MitwirkendeR]; Ambekiadis, K [MitwirkendeR]; Amelinckx, S [MitwirkendeR]; Anagnostopoulos, A. N [MitwirkendeR]; Andreev, A. V [MitwirkendeR]; Aronov, D. A [MitwirkendeR]; Avesov, A.D [MitwirkendeR]; Bagduev, E. G [MitwirkendeR]; Balynas, V [MitwirkendeR]; Bansal, C [MitwirkendeR]; Baumvol, I. J . R [MitwirkendeR]; Beige, H [MitwirkendeR]; Bondarenko, L. A [MitwirkendeR]; Boriskin, S. E [MitwirkendeR]; Bosman, G [MitwirkendeR]; Bostaütjoglo, O [MitwirkendeR]; Brodovoi, A.V [MitwirkendeR]; Brooks, C. R [MitwirkendeR]; Brühl, H.-G [MitwirkendeR]; Bugnet, P [MitwirkendeR]; Bäk, J [MitwirkendeR]; Carter, C.B [MitwirkendeR]; Chattopadhyay, D [MitwirkendeR]; Damköhler, R [MitwirkendeR]; Daunay, J [MitwirkendeR]; Daunay, Jac [MitwirkendeR]; De Barros, B.A.S [MitwirkendeR]; Dekhtyar, Yu.D [MitwirkendeR]; Delavignette, P [MitwirkendeR]; Deryagin, A.V [MitwirkendeR]; Dos Santos, C.A [MitwirkendeR]; Druilhe, R [MitwirkendeR]; Falco, Ch. M [MitwirkendeR]; Farber, B.Ya [MitwirkendeR]; Föll, H [MitwirkendeR]; Gaidukov, G.N [MitwirkendeR]; Garbarczyk, J [MitwirkendeR]; Gasanov, E.M [MitwirkendeR]; Gautam, V.K [MitwirkendeR]; Geilek, H.-D [MitwirkendeR]; Geiler, H.-D [MitwirkendeR]; Ghodgaonkar, A.M [MitwirkendeR]; Ghosal, A [MitwirkendeR]; Gilenko, M.S [MitwirkendeR]; Godlewska, M [MitwirkendeR]; Goto, K [MitwirkendeR]; Grodzinski, A [MitwirkendeR]; Gueffroy-Oettel, B [MitwirkendeR]; Götz, G [MitwirkendeR]; Haneczok, G [MitwirkendeR]; Hattori, K [MitwirkendeR]; Hegenbarth, E [MitwirkendeR]; Hehl, K [MitwirkendeR]; Heindl, R [MitwirkendeR]; Henning, I [MitwirkendeR]; Heumann, Th [MitwirkendeR]; Hoffmann, G [MitwirkendeR]; Holland, O. W [MitwirkendeR]; Igata, N [MitwirkendeR]; Imura, T [MitwirkendeR]; Inabe, K [MitwirkendeR]; Ivanov, S. A [MitwirkendeR]; Jakubowski, W [MitwirkendeR]; Karageorgy-Alkalaev, P.M [MitwirkendeR]; Khan, M. R [MitwirkendeR]; Kibihata, H [MitwirkendeR]; Klechkovskaya, V. V [MitwirkendeR]; Klissurski, I [MitwirkendeR]; Klotii, B [MitwirkendeR]; Knab, G. G [MitwirkendeR]; Kobayashi, T [MitwirkendeR]; Kolesnikova, A. L [MitwirkendeR]; Kollie, T. G [MitwirkendeR]; Kotov, N.M [MitwirkendeR]; Kovalenko, S. I [MitwirkendeR]; Kozlovskai, N.A [MitwirkendeR]; Krainyukova, N . V [MitwirkendeR]; Krotkus, A [MitwirkendeR]; Landuyt, J . Van [MitwirkendeR]; Lau, S. S [MitwirkendeR]; Leiderman, A.Yu [MitwirkendeR]; Litovchenko, A.S [MitwirkendeR]; Liu, Bai-Xin [MitwirkendeR]; Ludwig, M [MitwirkendeR]; Löfflee, H [MitwirkendeR]; Maksimov, K.S [MitwirkendeR]; Malyutin, V.I [MitwirkendeR]; Massalska-Abodz, M [MitwirkendeR]; Melnikov, A.A [MitwirkendeR]; Mertig, M [MitwirkendeR]; Meschter, P . J [MitwirkendeR]; Mitov, I [MitwirkendeR]; Morato, S.P [MitwirkendeR]; Moron, J.W [MitwirkendeR]; Moskalev, V.N [MitwirkendeR]; Mushnikov, N. V [MitwirkendeR]; Nabayan, J [MitwirkendeR]; Nicolet, M-A [MitwirkendeR]; Nikitenko, V.I [MitwirkendeR]; Nishino, Y [MitwirkendeR]; Nojima, S [MitwirkendeR]; Novozhilov, A.I [MitwirkendeR]; Nowick, A. S [MitwirkendeR]; Oelgakt, G [MitwirkendeR]; Okuno, T [MitwirkendeR]; Osukhovsku, V.E [MitwirkendeR]; Peart, S.J [MitwirkendeR]; Plath, R [MitwirkendeR]; Ploss, B [MitwirkendeR]; Pompe, G [MitwirkendeR]; Pozhidaev, E . D [MitwirkendeR]; Purkait, N.N [MitwirkendeR]; Ramani, K [MitwirkendeR]; Ranganathan, S [MitwirkendeR]; Ranieri, I.M [MitwirkendeR]; Reddy, A.D [MitwirkendeR]; Regel, L. L [MitwirkendeR]; Regel, V. R [MitwirkendeR]; Romanov, A.E [MitwirkendeR]; Rubinov, V.V [MitwirkendeR]; Rusakov, A. P [MitwirkendeR]; Saenko, V. S [MitwirkendeR]; Sagalovich, G. L [MitwirkendeR]; Salisbury, I.G [MitwirkendeR]; Samoilovich, V.I [MitwirkendeR]; Sastry, G. V. S [MitwirkendeR]; Sastry, G.S [MitwirkendeR]; Sathyanarayan, S.G [MitwirkendeR]; Sauer, W [MitwirkendeR]; Schalge, R [MitwirkendeR]; Schullee, I . K [MitwirkendeR]; Sekita, M [MitwirkendeR]; Self, P . G [MitwirkendeR]; Sharma, Y.K [MitwirkendeR]; Shaw, M. P [MitwirkendeR]; Shikhsaidov, M. Sh [MitwirkendeR]; Shuvalov, L. A [MitwirkendeR]; Simmich, O [MitwirkendeR]; Singh, J [MitwirkendeR]; Sorge, G [MitwirkendeR]; Stegmann, R [MitwirkendeR]; Stobbs, W. M [MitwirkendeR]; Stock, D [MitwirkendeR]; Strzeszewski, J [MitwirkendeR]; Surendranath, K [MitwirkendeR]; Suryanarayana, C [MitwirkendeR]; Swiderczak, K [MitwirkendeR]; Takada, K [MitwirkendeR]; Takeuchi, N [MitwirkendeR]; Tavendale, A.J [MitwirkendeR]; Tishchenko, N. P [MitwirkendeR]; Tognato, R [MitwirkendeR]; Tomov, T [MitwirkendeR]; Tyutnev, A. P [MitwirkendeR]; Urban, S [MitwirkendeR]; Urusovskaya, A. A [MitwirkendeR]; Van Dee Ziel, A [MitwirkendeR]; Van Tendeloo, G [MitwirkendeR]; Varin, R. A [MitwirkendeR]; Verbilo, A. V [MitwirkendeR]; Vieira, N.D [MitwirkendeR]; Vorobiev, Yu.D [MitwirkendeR]; Wagner, M [MitwirkendeR]; Wang, Da Yu [MitwirkendeR]; Wasiucionek, M [MitwirkendeR]; Watari, F [MitwirkendeR]; Wilkens, M [MitwirkendeR]; Yuito, M [MitwirkendeR]; Ziel, A. Van Der [MitwirkendeR]; Zijlstra, R. J. J [MitwirkendeR]
-
imprint:
Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe] - Published in: Physica status solidi ; Volume 73, 1 ; A
- Issue: Reprint 2021
- Extent: 1 Online-Ressource (460 p)
- Language: English
- DOI: 10.1515/9783112495001
- ISBN: 9783112495001
- Identifier:
- Keywords: SCIENCE / General
- Type of reproduction: [Online-Ausgabe]
- Origination:
-
Footnote:
In English
Mode of access: Internet via World Wide Web
- Description: Frontmatter -- Author Index -- Contents -- Review Article -- Distribution Model of Flicker Noise in Semiconductors -- Original Papers -- Sputter Epitaxy of Ag and Ni Films -- Electron Microscopic Studies of Crystallization and Magnetic Domain Structure of Mn-Ga Thin Films -- Anomalous Contrast in Weak Beam Images of Stacking Faults -- Effect of Sample Size upon Mean-Square Displacements of Atoms in Solidified Noble Gases -- Microwave Theory of Ballistic GaAs Solid State Diodes and Triodes -- Oscillator Strengths of Transitions between Stark Levels of NdxGd1-xPsO14 -- Dielectric Relaxation in Liquid and Plastic Phases of 2,2-Dinitropropane -- Exoelectron Emission from Metals (Cu, Zn, Au) Excited by Low-Energy Electrons below 200 eV -- Transient Radiation-Induced Conductivity in Polymers -- Influence of Composition Faults on the Anisotropic Conductivity of Layered Semiconductors -- Time-Resolved TEM of Transient Effects in Pulse Annealing of Ge and Ge-Te Films -- Theoretical Considerations on the Diffusion-Controlled Particle Growth in an Isotropic Medium -- Experimentelle Untersuchungen zur Klärung des Diffusionsverhaltens kupferreicher Kupfer-Nickel Legierungen -- The Influence of the Doping Level on the Cathodoluminescence in GaAs1-xPx:N, Zn Epitaxial Layers -- Determination of Nitrogen Concentrations in (111) Oriented VPE-GaP Epitaxial Layers by Measurement of the Precision Lattice Parameter -- Pulse Laser Induced High-Temperature Solid-Phase Annealing of Arsenic Implanted Silicon -- The Dependence of the Reversion of Ghiinier-Preston Zones in an Al-4.5 at% Zn-2.0 at% Mg Alloy on the Pre-Ageing Conditions -- Electrical Characteristics of the InSb Schottky Diode -- A Grain-Boundary-Type Maxwell-Wagner Peak in the Thermally-Stimulated Depolarization of Doped Ceria Ceramics -- Generation Process of Dislocations in Precipitate-Containing Silicon Crystals -- Ti-Au Metallic Glasses Formed by Ion Mixing -- The Magnetic Heat Capacity of the Configurationally Disordered Ni-25 at% Fe Alloy -- A Possible Origin of the Internal Electric Field Responsible of the Anomalous Photovoltage in Twinned ZnSe Single Crystals -- Energy Transfer Phenomena in the System (Y, Ce, Gd, Tb)Fs -- A Numerical Explanation for a Relation of the Domain Width to the Thickness in Barium Ferrite Crystals -- X-Ray Peak Broadening as a Result of Twin Formation in Some Oxides Derived by Dehydration -- Solid-Phase-Epitaxial Growth in Ion-Implanted Silicon -- On Internal Premelting in Metals -- On the Mechanism of F.C.C. -> H.C.P. Transformation -- Mossbauer Study of the Formation of Solid Solutions in the a-Fe2O3-Al203 System -- Influence of Irradiation with Heavy Ions on the Defect Structure and Mechanical Properties of LiF Crystals -- A Structural Study of Vapour-Deposited Al-Pd Alloys -- Self-Diffusion in Rare-Gas Solids -- The NDC and Low-Frequency Electric Instabilities in GaAs Crystals with Dislocations -- Short Notes -- The Influence of Exclusion on Light Absorption by Free Carriers in "Pure" (almost Intrinsic) Semiconductors with Non-Injecting Contacts -- An Anomalous Aspect of GaAs Surface Dissociation by Q-Switch Pulsed Ruby Laser Irradiation -- On the Effect of Lattice Dilatation upon Weak-Beam Contrast from Stacking Faults in Transmission Electron Microscopy -- A Further Comment on the Weak-Beam Contrast of Stacking Faults in Silicon -- Application of the Mayadas-Shatzkes Model for Electrical Conduction in Thin Films with Unlike Surfaces -- Exact J-U Characteristic of an Insulator with Traps Lying above the Fermi Level in Non-Constant Mobility Regime -- Elastic Stresses and Elastic Energy of a Flux Line in a Half-Space -- Some Aspects of Activation Energy Calculations for Thermostimulated Exoelectronic Emission -- Proton Conduction in (NH4)HSO4 Single Crystals -- Red Luminescence in X-Irradiated LiF:Mg -- On the Validity of Interpretation of Some Grain Boundary Processes Based on the Assumption about the Existence of Unrelaxed Extrinsic Grain Boundary Dislocations -- A Model of Energy Deposition into Semiconductors during Laser Annealing -- Elastic Nonlinearity of KH3(SeO3)2 and KD3(SeQ3)2 Crystals -- Some Structure Defects in Neutron Irradiated Fluorphlogopite -- On the Crystalline Structure of Hydrides of ErFe2 and HoFe2 -- Superconductive Properties of the Chevrel-Phase System CuxMo6S8 with x = 3.2 to 3.9 -- The Motion of Deep Donor Centres in Reverse Biased n-GaAs Surface Barrier Diodes -- Study of the Temperature Dependences of Magnetic Susceptibilities and 7Li NMR Spectra of Ferriferrous Micas -- Hall Measurements along Zinc Diffusion Profiles in n-GaAs1-a-xPx (0.6 < x < 1) -- Collision-Dominated Limit of Near-Thermal Noise in Short Solid-State Diodes -- Collision-Free Limit of Near-Thermal Noise in Short Solid-State Diodes -- TGA and DTA Studies on Me-Stabilized B- Alumina (Me = Co, Ni, Cu, Zn) Exposed to Moist Air -- On the Origin of S-Shaped Current-Voltage Characteristics in p-Type Tellurium -- Glass-Like Behaviour of Sr1-xBaxNb2O6 (SBN) Single Crystals Demonstrated by Heat Capacity Measurements -- The Structure Constant and Micromagnetic Structure of Etched Ni80Fe20 Films -- Room Temperature Visible Laser Action of F Aggregated Centers in LiF:Mg, OH Crystals -- High-Frequency Electron Transport in GaxIn1-xAsyP1-y Lattice Matched to InP -- The Analysis of Internal Friction Curves for a Temperature Gradient Existing along the Sample -- Stability of Composition Automodulated Complex Epitaxial Films -- Mossbauer Effect Study of Polymetallic Nodules from Indian Ocean Bed -- Search for Intermetallic Phases in Radiation-Enhanced Diffusion of Tin into Steels -- Change of Dislocation Mobility Characteristics in Silicon Single Crystals at Elevated Temperatures -- Superconduction: On the Sintering of a "Chevrel Phase" - A New High Temperature Phase of PbMo6S8 -- On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation -- Pre-Printed Titles -- Backmatter
- Access State: Restricted Access | Information to licenced electronic resources of the SLUB