Media type: E-Article Title: In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates Contributor: Gagnon, Jarod C.; Tungare, Mihir; Weng, Xiaojun; Leathersich, Jeffrey M.; Shahedipour-Sandvik, Fatemeh; Redwing, Joan M. imprint: Springer Science and Business Media LLC, 2012 Published in: Journal of Electronic Materials Language: English DOI: 10.1007/s11664-011-1852-1 ISSN: 1543-186X; 0361-5235 Keywords: Materials Chemistry ; Electrical and Electronic Engineering ; Condensed Matter Physics ; Electronic, Optical and Magnetic Materials Origination: Footnote: