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Guralnik, Benny; Hansen, Ole; Henrichsen, Henrik H.; Beltrán-Pitarch, Braulio; Østerberg, Frederik W.; Shiv, Lior; Marangoni, Thomas A.; Stilling-Andersen, Andreas R.; Cagliani, Alberto; Hansen, Mikkel F.; Nielsen, Peter F.; Oprins, Herman; Vermeersch, Bjorn; Adelmann, Christoph; Dutta, Shibesh; Borup, Kasper A.; Mihiretie, Besira M.; Petersen, Dirch H.

3ω correction method for eliminating resistance measurement error due to Joule heating

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  • Medientyp: E-Artikel
  • Titel: 3ω correction method for eliminating resistance measurement error due to Joule heating
  • Beteiligte: Guralnik, Benny; Hansen, Ole; Henrichsen, Henrik H.; Beltrán-Pitarch, Braulio; Østerberg, Frederik W.; Shiv, Lior; Marangoni, Thomas A.; Stilling-Andersen, Andreas R.; Cagliani, Alberto; Hansen, Mikkel F.; Nielsen, Peter F.; Oprins, Herman; Vermeersch, Bjorn; Adelmann, Christoph; Dutta, Shibesh; Borup, Kasper A.; Mihiretie, Besira M.; Petersen, Dirch H.
  • Erschienen: AIP Publishing, 2021
  • Erschienen in: Review of Scientific Instruments
  • Sprache: Englisch
  • DOI: 10.1063/5.0063998
  • ISSN: 0034-6748; 1089-7623
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: <jats:p>Electrical four-terminal sensing at (sub-)micrometer scales enables the characterization of key electromagnetic properties within the semiconductor industry, including materials’ resistivity, Hall mobility/carrier density, and magnetoresistance. However, as devices’ critical dimensions continue to shrink, significant over/underestimation of properties due to a by-product Joule heating of the probed volume becomes increasingly common. Here, we demonstrate how self-heating effects can be quantified and compensated for via 3ω signals to yield zero-current transfer resistance. Under further assumptions, these signals can be used to characterize selected thermal properties of the probed volume, such as the temperature coefficient of resistance and/or the Seebeck coefficient.</jats:p>