Beschreibung:
<jats:p>We have performed metalorganic chemical vapor deposition (MOCVD) on substrates of closed topologies, i.e., on a single cylindrical surface and on multiple cylindrical surfaces of ∼1000-Å-diam rods. The side geometry of epitaxial growth can be controlled by rod direction, growth temperature, and ratio of the amount of group-V material to that of group-III materials. We have succeeded in growing mesoscopic multiply connected AlAs with multiplicity up to 6. The MOCVD growth on substrates with closed topology is of potential interest for fabrication of sophisticated mesoscopic structures.</jats:p>