Beschreibung:
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(Pb, Nb)(Zr, Sn, Ti)O<jats:sub>3</jats:sub> films are developed on Pt-coated Si substrates using a sol-gel process and their electronic properties are studied. An excessive amount of Pb in precursor solution is necessary to obtain films with good crystallinity. A 2.4-µm-thick film annealed at 650°C shows a dielectric constant of about 400 at room temperature. Electric field intensity at the antiferroelectric-to-ferroelectric phase transition is 80 kV/cm. Spontaneous polarization is 28 µC/cm<jats:sup>2</jats:sup>. Spontaneous polarization in this film is close to that observed in bulk samples (sintered at 1270°C). The electric field intensity, however, is approximately twice that of bulk samples.
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